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HD44278P 106X0 7NC09 G710N MSK5030 150103 UPC811 CS5303
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forward voltage 0.4 0.6 0.8 1 1.2 1.4 1.6 0.1 1 10 M1FE40 tl=150 c [max] tl=25 c [max] pulse measurement per diode tl=150 c [typ] tl=25 c [typ] forward voltage v f [v] forward current i f [a]
0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 0.8 1 1.2 M1FE40 forward power dissipation sin average rectified forward current i o [a] forward power dissipation p f [w] tj = 150 c sine wave
0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 M1FE40 derating curve v r = v rm sin 0 v r case temperature tc [ c] average rectified forward current i o [a]
0 t p i o t d=t p /t 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 M1FE40 derating curve v r = v rm sin 0 v r ambient temperature ta [ c] average rectified forward current i o [a] 2-inch glass-epoxy substrate conductor layer 35 m
peak surge forward capability 0 10 20 30 40 50 1 10 100 M1FE40 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied
transient thermal impedance time t [s] transient thermal impedance q jc q ja q jl [ c/w] 0.1 1 10 100 M1FE40 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 q ja q jl q jc
0 20 40 60 80 100 120 140 160 1 10 100 1000 M1FE40 q ja [ c/w] q ja - conductor pattern area glass-epoxy substrate conductor layer 35 m m conductor pattern area [mm 2 ]


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